STPS30L45CT datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

4/8

STPS30L45CG/CR/CT/CW/CFP

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

VR(V)

IR(mA)

Tj=100°C

Tj=75°C

Tj=25°C

Tj=150°C

Tj=125°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

200

500

1000

2000

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

200

VFM(V)

IFM(A)

Typical values

Tj=150°C

Tj=25°C

Tj=125°C

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

S(cm²)

Rth(j-a) (°C/W)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab for D

2PAK (Epoxy

printed circuit board FR4, copper thickness: 35µm).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration.

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration.

(TO-220FPAB)

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