H8SXSLASH1663 datasheet(963/1158 Pages) RENESAS

963 / 1158 page

Section 21 Flash Memory (0.18-

µm F-ZTAT Version)

Rev.1.00 Jun. 07, 2006 Page 911 of 1102

REJ09B0294-0100

21.7.3

User Program Mode

Programming/erasing of the user MAT is executed by downloading an on-chip program. The

programming/erasing flow is shown in figure 21.11.

Since high voltage is applied to the internal flash memory during programming/erasing, a

transition to the reset state or hardware standby mode must not be made during

programming/erasing. A transition to the reset state or hardware standby mode during

programming/erasing may damage the flash memory. If a reset is input, the reset must be released

after the reset input period (period of

RES = 0) of at least 100 µs.

When programming,

program data is prepared

Programming/erasing

procedure program is

transferred to the on-chip

RAM and executed

Programming/erasing

start

Programming/erasing

end

Exit RAM emulation mode beforehand. Download is not allowed

in emulation mode.

When the program data is adjusted in emulation mode, select

the download destination specified by FTDAR carefully. Make

sure that the download area does not overlap the emulation

area.

Programming/erasing is executed only in the on-chip RAM.

After programming/erasing is finished, protect the flash memory

by the hardware protection.

Figure 21.11 Programming/Erasing Flow

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