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FAN5353 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FAN5353 データシート(HTML) 4 Page - Fairchild Semiconductor |
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4 / 13 page ![]() © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN5353 • Rev. 1.0.2 4 Electrical Characteristics Minimum and maximum values are at VIN = 2.7V to 5.5V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = 25°C, VIN =5V. Symbol Parameter Conditions Min. Typ. Max. Units Power Supplies IQ Quiescent Current ILOAD = 0, VOUT=1.2V 14 mA I SD Shutdown Supply Current EN = GND 0.1 3.0 μA VUVLO Under-Voltage Lockout Threshold VIN Rising 2.83 2.95 V VIN Falling 2.10 2.30 2.40 V VUVHYST Under-Voltage Lockout Hysteresis 530 mV Logic Pins VIH HIGH-Level Input Voltage 1.05 V VIL LOW-Level Input Voltage 0.4 V VLHYST Logic Input Hysteresis Voltage 100 mV IIN Input Bias Current Input tied to GND or VIN 0.01 1.00 μA IOUTL PGOOD Pull-Down Current VPGOOD = 0.4V 1 mA IOUTH PGOOD HIGH Leakage Current VPGOOD = VIN 0.01 1 μA VOUT Regulation VREF Output Reference DC Accuracy Measured at FB Pin TA = 25°C 0.792 0.800 0.808 V 0.788 0.800 0.812 V VREG VOUT DC Accuracy At VOUT pin W.R.T. Calculated Value, ILOAD = 500mA 1.6% +1.6 % LOAD OUT I V Δ Δ Load Regulation IOUT(DC) = 0 to 3A –0.03 %/A IN OUT V V Δ Δ Line Regulation 2.7V ≤ VIN ≤ 5.5V, IOUT(DC) = 1.5A 0.01 %/V Transient Response ILOAD step 0.1A to 1.5A, tr = tf = 100ns, VOUT=1.2V +20 mV Power Switch and Protection RDS(ON)P P-channel MOSFET On Resistance 60 mΩ RDS(ON)N N-channel MOSFET On Resistance 40 mΩ ILIMPK P-MOS Peak Current Limit 3.75 4.55 5.50 A TLIMIT Thermal Shutdown 150 °C THYST Thermal Shutdown Hysteresis 20 °C VSDWN Input OVP Shutdown Rising Threshold 6.2 V Falling Threshold 5.50 5.85 V Frequency Control fSW Oscillator Frequency 2.7 3.0 3.3 MHz Soft-Start tSS Regulator Enable to Regulated VOUT RLOAD > 5Ω, to VOUT = 1.2V 210 250 μs RLOAD > 5Ω, to VOUT = 1.8V 340 420 μs VSLEW Soft-Start VOUT Slew Rate 10 V/ms |
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