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DMN2009LSS データシート(PDF) 1 Page - Diodes Incorporated |
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DMN2009LSS データシート(HTML) 1 Page - Diodes Incorporated |
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1 / 5 page  DMN2009LSS Document number: DS31409 Rev. 6- 2 1 of 5 www.diodes.com June 2010 © Diodes Incorporated DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 8m Ω @ VGS = 10V • 9m Ω @ VGS = 4.5V • 12m Ω @ VGS = 2.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 12 9.6 A Pulsed Drain Current (Note 3) IDM 42 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2 W Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 2 oz, FR-4 PCB, with RθJA = 62.5°C/W 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. SO-8 TOP VIEW Internal Schematic TOP VIEW S D D G D D S S |
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