DMN2009LSS

Document number: DS31409 Rev. 6- 2

2 of 5

www.diodes.com

June 2010

© Diodes Incorporated

DMN2009LSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

⎯

1.2

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

8

9

12

m

Ω

Forward Transconductance

⎯

27

⎯

S

Diode Forward Voltage (Note 5)

0.5

0.7

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

2555

⎯

pF

Output Capacitance

⎯

523

⎯

pF

Reverse Transfer Capacitance

⎯

496

⎯

pF

Gate Resistance

⎯

1.1

⎯

Ω

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

28.9

58.3

⎯

nC

Gate-Source Charge

⎯

3.7

⎯

Gate-Drain Charge

⎯

11.4

⎯

Notes:

5.

Short duration pulse test used to minimize self-heating effect.

01

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 1.5V

GS

V

= 3.0V

GS

V

= 4.0V

GS

V

= 5V

DS

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

0.4

0.6

0.8

1

1.2

1.4

1.6

V

= 10V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A