DMN2009LSS

Document number: DS31409 Rev. 6- 2

3 of 5

www.diodes.com

June 2010

© Diodes Incorporated

DMN2009LSS

Fig. 3 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.005

0.01

0.015

V

= 4.5V

I = 10A

GS

D

V

= 2.5V

I = 8A

GS

D

V

= 10V

I = 12A

GS

D

Fig. 4 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.8

0.9

1.0

1.1

1.2

1.3

1.4

V

= 2.5V

I = 8A

GS

D

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 12A

GS

D

Fig. 5 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

100

1,000

10,000

04

8

12

16

20

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A

-50

-25

0

25

50

75

100

125 150

0

0.2

0.4

0.6

0.8

1.0

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

1

10

100

0.1 0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A