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STGW40NC60KD データシート(PDF) 3 Page - STMicroelectronics

部品番号 STGW40NC60KD
部品情報  600 V, 40 A short-circuit rugged IGBT
PDF  13 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40NC60KD データシート(HTML) 3 Page - STMicroelectronics

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DocID14807 Rev 2
3/13
STGW40NC60KD
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at TC = 25 °C
70
A
IC
(1)
Collector current (continuous) at TC = 100 °C
38
A
ICL
(2)
2.
Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V
Turn-off latching current
220
A
ICP
(3)
3.
Pulse width limited by max. junction temperature allowed
Pulsed collector current
220
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at TC = 25 °C
30
A
IFSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
120
A
PTOT
Total dissipation at TC = 25 °C
250
W
tscw
Short circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125°C, RG = 10 Ω, VGE = 12 V
10
µs
Tj
Operating junction temperature
– 55 to 150
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case IGBT max.
0.5
°C/W
Thermal resistance junction-case diode max.
1.5
°C/W
Rthj-amb Thermal resistance junction-ambient max
50
°C/W
I
c Tc
()
T
JMAX
()
T
c
R
thj
c
V
CE sat
() MAX
()
T
c I
,
c
()
×
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