STGW40NC60KD datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STGW40NC60KD

4/13

DocID14807 Rev 2

Electrical characteristics

TCASE=25°C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE= 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

VGE = 15 V, IC = 30 A,

TC = 125 °C

2.1

1.9

2.7

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 125 °C

500

µA

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.5

6.5

IGES

Gate-emitter cut-off

current (VCE = 0)

VGE = ±20 V

±100

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 15 V , IC = 30 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

2870

295

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480 V, IC = 30 A,

VGE = 15 V

(see Figure 18)

135

69.5

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