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AN628 データシート(PDF) 24 Page - STMicroelectronics

部品番号 AN628
部品情報  DESIGNING A HIGH POWER FACTOR SWITCHING
PDF  35 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN628 データシート(HTML) 24 Page - STMicroelectronics

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AN628 APPLICATION NOTE
24/35
Input capacitor
The input capacitor, placed across the rectified mains, must be considered as part of the EMI filter. The advan-
tage, in placing this part after the mains rectification, is the shunt effect for the high frequency current in order
to avoid it to flow throws the diodes of the bridge due to the poor recovery characteristic.
On the other side, the value of this capacitor must to be held as low as possible because the inherent DC voltage
content affects the harmonic distortion.
With 220nF, the high frequency is filter enough and the introduced DC level can be considered not significant
at reasonable load.
Output capacitor
For the output capacitor selection, it can be consider just the output voltage ripple.
Choosing 100
µF/450Vthr 100/120Hz ripple is ± 8Vac
Instead, if the pre regulated voltage bus must ensure enough energy for Hold-up requirements (i.e. the energy
is delivered to a power supply system), the Coot value will be increased to around 180
µF.
Sense resistor
The sense resistance (Rest) is selected considering both, the signal level and the power dissipation parameters.
Using ±70m
Ω, the sense signal is good enough to be managed by the current loop. On the other side, the max-
imum power dissipation will be:
Pros = RS · (Ilrms
2 + Ilhfrms2) ≤ 0.5W
Where Alarms max. = 2.50A
Power Mos
The Mosfet breakdown voltage is imposed; Bvdss
≥ Vout + Dvout + margin = 500V. The Rdson is selected taking
in to account the conduction power dissipation.
The formula for calculation is: Pon_max = Iqrms
2 · Rdon
i.e. considering Ron(t) = 0.7
Ω the Pon_max = 2.15 · 0.7 = 3.3W.
Adding the switching (and the capacitive) losses we can estimate 8W to 10W total power dissipation.
Boost Diode
The continuous current mode of operation, suggest using an Ultra-fast reverse recovery diode. The STMicro-
electronics TURBOSWITCH™ family offers a good solution for this kind of application.
Boost Inductor
The inductor design starts defining the L value that is a function of the switching frequency and the accepted
current ripple. In this design, we suggest an inductor value L = 0.75mH that can be realized using an ET3411
gapped set-core ferrite.



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