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AN628 データシート(PDF) 31 Page - STMicroelectronics

部品番号 AN628
部品情報  DESIGNING A HIGH POWER FACTOR SWITCHING
PDF  35 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN628 データシート(HTML) 31 Page - STMicroelectronics

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AN628 APPLICATION NOTE
Table 5. Half power range at 110Vac
(*) Most significant losses balance at half power (110Vmains):
– Power-mos (Q1+Q2) dissipated power = 7.5W.
– Bridge (B1) dissipated power = 3.7W.
– Boost turbo-diode (D4) dissipated power = 1.1W.
– Boost inductor L1 = 1.3W
– Aux. Inductor L2 = 0.95W.
– NTC dissipated power = 0.7W.
– Snubber = 1W
Table 6. Half power range at 220Vac
(*) Most significant losses balance at half power (220Vmains):
– Power-mos (Q1+Q2) dissipated power = 5.64W.
– Bridge (B1) dissipated power = 1.9W.
– Boost turbo-diode (D4) dissipated power = 0.88W.
– Boost inductor L1 = .5W
– Aux. Inductor L2 = 0.6W.
– NTC dissipated power = 0.52W.
– Snubber = 0.7W
Significant waveforms
Since the described application is provided with a "magnetic snubber circuitry", it is of some interest to have a
look at some switching waveform.
In figure 28, it is depicted the power drain voltage and the current measured in L2 (aux. Inductor) .
To be observed the "delay effect" of the current and the control of its slope. In fact, this circuitry allows to hardly
reducing the Voltage-Current power crossing and the ramp rate of the drain current, reducing in this way the
power dissipated inside the switch and the high frequency contents of the switching.
In figure 29, it is shown both the switching edge and pointed the recovery charge due to the boost diode and the
effect of the Voltage Clamp (D7, C14, R18).
In figure 30, the switch-off edge is magnified and pointed out the effect of the RCD snubber to ground (Cs, Q4
R25) limiting the dV/dt and the above-mentioned Voltage Clamp.
Finally, in figure 31, it is shown and pointed, in the reverse recovery region, the demagnetization effect of the
D5+D6 and its control on the second slope of the recovery itself.
Vmains
Pout
Vout
Pin
THD
PF
Eff.
88Vac
219W
420Vdc
239W
2.4%
0.999
.916
110Vac (*)
220W
421Vdc
238W
3.6%
0.999
.925
132Vac
222W
423Vdc
237W
2.7%
0.999
.937
Vmains
Pout
Vout
Pin
THD
PF
Eff.
176Vac
223W
424Vdc
236W
8%
0.993
.945
220Vac (*)
223W
424Vdc
235W
10.5%
0.994
.949
264Vac
223W
424Vdc
235W
15%
0.978
.95



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