SST25WF080B datasheet(1/39 Pages) MICROCHIP

部品番号	SST25WF080B

部品情報	8 Mbit 1.8V SPI Serial Flash

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メーカー	MICROCHIP [Microchip Technology]

ホームページ	http://www.microchip.com

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 2014 Microchip Technology Inc.

DS20005164C-page 1

Features

• Single Voltage Read and Write Operations

- 1.65-1.95V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 40MHz

• Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

• Superior Reliability

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

• Ultra-Low Power Consumption:

- Active Read Current: 4 mA (typical)

- Standby Current: 10 μA (typical)

- Power-down Mode Standby Current: 4 μA (typical)

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Uniform 64 KByte overlay blocks

• Page Program Mode

- 256 Bytes/Page

• Fast Erase and Page-Program:

- Chip-Erase Time: 500 ms (typical)

- Sector-Erase Time: 40 ms (typical)

- Block-Erase Time: 80 ms (typical)

- Page-Program Time: 0.8 ms/ 256 bytes (typical)

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

• Hold Pin (HOLD#)

- Suspend a serial sequence without deselect-

ing the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the status register

• Software Write Protection

- Write protection through Block-Protection bits

in status register

• Temperature Range

- Industrial: -40°C to +85°C

• Packages Available

- 8-lead SOIC (150 mils)

- 8-contact USON (2mm x 3mm)

• All devices are RoHS compliant

Product Description

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide

tunneling injector attain better reliability and manufac-

turability compared with alternate approaches.

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

SST25WF080B is offered in 8-lead SOIC and 8-contact

USON packages. See Figure 2-1 for the pin assign-

ments.

SST25WF080B

8 Mbit 1.8V SPI Serial Flash

同様の部品番号 - SST25WF080B

メーカー	部品番号	データシート	部品情報
Microchip Technology	SST25WF080B	1Mb / 44P	8-Mbit, 1.8V, SPI Serial Flash Revision H November 2022
	SST25WF080B-40E/SN	1Mb / 44P	8-Mbit, 1.8V, SPI Serial Flash Revision H November 2022
	SST25WF080B-40E/SN13GVAO	1Mb / 44P	8-Mbit, 1.8V, SPI Serial Flash Revision H November 2022
	SST25WF080B-40I/SN	1Mb / 44P	8-Mbit, 1.8V, SPI Serial Flash Revision H November 2022
	SST25WF080BT-40E/NP	1Mb / 44P	8-Mbit, 1.8V, SPI Serial Flash Revision H November 2022

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