STF12N65M2 datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

DocID027318 Rev 2

3/13

STF12N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

(1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

ISD ≤ 8 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

V/ns

dv/dt (4)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

1.6

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50 V)

250

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