STF12N65M2 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STF12N65M2

4/13

DocID027318 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

650

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 650 V

µA

VGS = 0, VDS = 650 V,

TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 4 A

0.42

0.5

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

535

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-1.1

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 520 V

144

Intrinsic gate

resistance

f = 1 MHz open drain

Ω

Total gate charge

VDD = 520 V, ID = 8 A,

VGS = 10 V (see Figure 15)

-16.5

Qgs

Gate-source charge

2.6

Qgd

Gate-drain charge

8.5

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