STF12N65M2 datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

DocID027318 Rev 2

5/13

STF12N65M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

-9

Rise time

td(off)

Turn-off delay time

Fall time

13.5

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

VGS = 0, ISD = 8 A

1.6

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16)

-313

Qrr

Reverse recovery charge

2.7

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 8 A, di/dt = 100 A/µs

VDD = 60 V, Tj=150 °C

(see Figure 16)

-462

Qrr

Reverse recovery charge

4.1

µC

IRRM

Reverse recovery current

17.5

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