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LF356-MIL データシート(PDF) 1 Page - Texas Instruments

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部品番号 LF356-MIL
部品情報  JFET Input Operational Amplifier
PDF  28 Pages
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

LF356-MIL データシート(HTML) 1 Page - Texas Instruments

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LF356-MIL
SNOSD55 – JUNE 2017
LF356-MIL JFET Input Operational Amplifier
1
1 Features
1
Advantages
Replace Expensive Hybrid and Module FET
Op Amps
Rugged JFETs Allow Blow-Out Free Handling
Compared With MOSFET Input Devices
Excellent for Low Noise Applications Using
Either High or Low Source Impedance—Very
Low 1/f Corner
Offset Adjust Does Not Degrade Drift or
Common-Mode Rejection as in Most
Monolithic Amplifiers
New Output Stage Allows Use of Large
Capacitive Loads (5,000 pF) Without Stability
Problems
Internal Compensation and Large Differential
Input Voltage Capability
Common Features
Low Input Bias Current: 30 pA
Low Input Offset Current: 3 pA
High Input Impedance: 1012 Ω
Low Input Noise Current: 0.01 pA/
√Hz
High Common-Mode Rejection Ratio: 100 dB
Large DC Voltage Gain: 106 dB
Uncommon Features
Extremely Fast Settling Time to 0.01%: 1.5 μs
Fast Slew Rate: 12 V/µs
Wide Gain Bandwidth: 5 MHz
Low Input Noise Voltage: 12 nV/
√Hz
2 Applications
Precision High-Speed Integrators
Fast D/A and A/D Converters
High Impedance Buffers
Wideband, Low Noise, Low Drift Amplifiers
Logarithmic Amplifiers
Photocell Amplifiers
Sample and Hold Circuits
3 Description
The LF356-MIL device are the first monolithic JFET
input
operational
amplifiers
to
incorporate
well-
matched, high-voltage JFETs on the same chip with
standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift,
coupled with offset adjust, which does not degrade
drift or common-mode rejection. The devices are also
designed
for
high
slew
rate,
wide
bandwidth,
extremely fast settling time, low voltage and current
noise and a low 1/f noise corner.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LF356-MIL
SOIC (8)
4.90 mm × 3.91 mm
TO-CAN (8)
9.08 mm × 9.08 mm
PDIP (8)
9.81 mm × 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
3 pF in LF357 series


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