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LF356-MIL データシート(PDF) 1 Page - Texas Instruments |
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LF356-MIL データシート(HTML) 1 Page - Texas Instruments |
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1 / 28 page ![]() Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LF356-MIL SNOSD55 – JUNE 2017 LF356-MIL JFET Input Operational Amplifier 1 1 Features 1 • Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers – New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems – Internal Compensation and Large Differential Input Voltage Capability • Common Features – Low Input Bias Current: 30 pA – Low Input Offset Current: 3 pA – High Input Impedance: 1012 Ω – Low Input Noise Current: 0.01 pA/ √Hz – High Common-Mode Rejection Ratio: 100 dB – Large DC Voltage Gain: 106 dB • Uncommon Features – Extremely Fast Settling Time to 0.01%: 1.5 μs – Fast Slew Rate: 12 V/µs – Wide Gain Bandwidth: 5 MHz – Low Input Noise Voltage: 12 nV/ √Hz 2 Applications • Precision High-Speed Integrators • Fast D/A and A/D Converters • High Impedance Buffers • Wideband, Low Noise, Low Drift Amplifiers • Logarithmic Amplifiers • Photocell Amplifiers • Sample and Hold Circuits 3 Description The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well- matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LF356-MIL SOIC (8) 4.90 mm × 3.91 mm TO-CAN (8) 9.08 mm × 9.08 mm PDIP (8) 9.81 mm × 6.35 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic 3 pF in LF357 series |
同様の部品番号 - LF356-MIL |
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同様の説明 - LF356-MIL |
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