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ATSAMB11XR データシート(PDF) 19 Page - Microchip Technology

部品番号 ATSAMB11XR
部品情報  Ultra Low Power BLE 4.1 SiP/Module
PDF  87 Pages
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メーカー  MICROCHIP [Microchip Technology]
ホームページ  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

ATSAMB11XR データシート(HTML) 19 Page - Microchip Technology

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Table 6-1. 32.768 kHz External Clock Specification
Parameter
Min.
Typ.
Max Unit
Comments
Oscillation frequency
32.768
kHz Must be able to drive 6 pF load at desired frequency
VinH
0.7
1.2
V
High level input voltage
VinL
0
0.2
Low level input voltage
Stability – Temperature -250
+250 ppm
Additional internal trimming capacitors (C_onchip) are available. They provide the possibility to tune the
frequency output of RTC XO without changing the external load capacitors. Contact technical support for
usage of the internal trimming capacitors.
Note: 
Refer the BluSDK BLE API Software Development Guide for details on how to enable the 32.768 kHz
clock output and tune the internal trimming capacitors.
Table 6-2. 32.768 kHz XTAL C_onchip Programming
Register: pierce_cap_ctrl[3:0]
C_onchip [pF]
0000
0.0
0001
1.0
0010
2.0
0011
3.0
0100
4.0
0101
5.0
0110
6.0
0111
7.0
1000
8.0
1001
9.0
1010
10.0
1011
11.0
1100
12.0
1101
13.0
1110
14.0
1111
15.0
6.3.2
RTC XO Design and Interface Specification
The RTC consists of two main blocks: The Programmable Gm stage and tuning capacitors. The
programmable Gm stage is used to guarantee start-up and to sustain oscillation. Tuning capacitors are
used to adjust the XO center frequency and control the XO precision for different crystal models. The
output of the XO is driven to the digital domain via a digital buffer stage with a supply voltage of 1.2V.
ATSAMB11XR/ZR
© 2017 Microchip Technology Inc.
Datasheet Preliminary
DS70005342A-page 19



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