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データシートサーチシステム |
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データシートサーチシステム |
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GD25LB128DSJS データシート(PDF) 63 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LB128DSJS データシート(HTML) 63 Page - GigaDevice Semiconductor (Beijing) Inc. |
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63 / 75 page  1.8V Uniform Sector Dual and Quad Serial Flash GD25LB128D 63 (T= -40℃~125℃, VCC=1.65~2.0V) Symbol Parameter Test Condition Min. Typ. Max. Unit. ILI Input Leakage Current ±2 μA ILO Output Leakage Current ±2 μA ICC1 Standby Current CS#=VCC, VIN=VCC or VSS 35 120 μA ICC2 Deep Power-Down Current CS#=VCC, VIN=VCC or VSS 1 40 μA ICC3 Operating Current (Read) CLK=0.1VCC / 0.9VCC at 104MHz, Q=Open(*1,*2,*4 I/O) 15 20 mA CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O) 13 18 mA ICC4 Operating Current (PP) CS#=VCC 25 mA ICC5 Operating Current (WRSR) CS#=VCC 25 mA ICC6 Operating Current (SE) CS#=VCC 25 mA ICC7 Operating Current (BE) CS#=VCC 25 mA ICC8 Operating Current (CE) CS#=VCC 25 mA VIL Input Low Voltage -0.5 0.2VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage IOL =100 μA 0.2 V VOH Output High Voltage IOH =- 100μA VCC-0.2 V Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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