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STM32WB55CC データシート(PDF) 98 Page - STMicroelectronics

部品番号 STM32WB55CC
部品情報  Multiprotocol wireless 32-bit MCU Arm
PDF  165 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32WB55CC データシート(HTML) 98 Page - STMicroelectronics

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IDD
(SRAM2a)
(3)
Supply
current to be
subtracted in
Standby
mode when
SRAM2a is
not retained
-
1.8 V 0.160 0.210 0.380 0.660 2.30
5.15
10.9
TBD
TBD
TBD
TBD
TBD
TBD
TBD
µA
2.4 V 0.165 0.245 0.375 0.650 2.15
5.20
11.0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3.0 V 0.155 0.250 0.385 0.630 2.25
5.20
11.0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3.6 V 0.155 0.235 0.375 0.670 2.20
5.20
11.0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IDD
(wakeup
from
Standby)
Supply current
during
wakeup from
Standby mode
Wakeup clock is
HSI16. See (4).
SMPS ON
3.0 V
-
TBD
-
-
-
-
-
-
-
-
-
-
-
-
mA
Wakeup clock is
HSI16. See (4).
SMPS OFF
3.0 V
-
TBD
-
-
-
-
-
-
-
-
-
-
-
-
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2a mode is: IDD(Standby) + IDD(SRAM2a). The supply current in Standby with RTC with SRAM2a mode is:
IDD(Standby + RTC) + IDD(SRAM2a).
4. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 49: Low-power mode wakeup timings.
Table 44. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C



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