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STM8L051F3 データシート(PDF) 79 Page - STMicroelectronics

部品番号 STM8L051F3
部品情報  8-bit ultra-low-power MCU, 8-Kbyte Flash memory, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC
PDF  96 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STM8L051F3 データシート(HTML) 79 Page - STMicroelectronics

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DS9178 Rev 4
79/96
STM8L051F3
Electrical parameters
87
8.3.9
Embedded reference voltage
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
8.3.10
12-bit ADC1 characteristics
In the following table, data is guaranteed by design, not tested in production.
Table 42. Reference voltage characteristics
Symbol
Parameter
Conditions
Min
Typ
Max.
Unit
IREFINT
Internal reference voltage
consumption
-
-
1.4
-
µA
TS_VREFINT(1)(2)
ADC sampling time when reading
the internal reference voltage
--
5
10
µs
IBUF(2)
Internal reference voltage buffer
consumption (used for ADC)
-
-
13.5
25
µA
VREFINT out
Reference voltage output
-
1.202(3)
1.224
1.242(3)
V
ILPBUF(2)
Internal reference voltage low-
power buffer consumption
-
-
730
1200
nA
IREFOUT(2)
Buffer output current(4)
--
-
1
µA
CREFOUT
Reference voltage output load
-
-
-
50
pF
tVREFINT
Internal reference voltage startup
time
--
2
3
ms
tBUFEN(2)
Internal reference voltage buffer
startup time once enabled (1)
--
-
10
µs
ACCVREFINT
Accuracy of VREFINT stored in the
VREFINT_Factory_CONV byte(5)
--
-
± 5
mV
STABVREFINT
Stability of VREFINT over
temperature
-40 °C
≤ TA ≤ 85
°C
-20
50
ppm/°C
Stability of VREFINT over
temperature
0 °C
≤ TA ≤ 50 °C
-
-
20
ppm/°C
STABVREFINT
Stability of VREFINT after 1000
hours
--
-
TBD
ppm
1. Defined when ADC output reaches its final value ±1/2LSB
2. Data guaranteed by design.
3. Tested in production at VDD = 3 V ±10 mV.
4. To guaranty less than 1%
VREFOUT deviation.
5. Measured at VDD = 3 V ±10 mV. This value takes into account VDD accuracy and ADC conversion accuracy.



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