NM29N16 datasheet(5/30 Pages) NSC

5 / 30 page

AC Electrical Characteristics (TA e 0 Cto a70 C VCC e 5V g10%) (Continued)

Note 1

In case that CLE ALE CE are input with clock tWC exceeds 80 ns Transition time tT s 5ns

set-up time

20 ns

hold time

40 ns

tWP

40 ns

tXX

4tT

20 ns

TLD11915 – 5

Note 2

CE high to Ready time depends on Pull up resister tied to RB pin (Refer to notification (10) toward the end of this document)

Note 3

In the case that CE turns to a high level after accessing the last address (263) in read mode (1) or (2) CE high time must keep equal to or greater than

300 ns when the delay time of CE against RE is 0 to 200 ns as shown below

In the second case the device will not turn to a ‘‘Busy’’ state when the CE delay time is less than 30 ns

TLD11915 – 6

Programming and Erasing Characteristic (TA e 0 Cto a 70 C VCC e 5V g10%)

Symbol

Parameter

Min

Typ

Max

Unit

Notes

tPROG

Average Programming Time

300 – 1000

5000

Divided Number on Same Page

Cycles

(1)

tBERASE

Block Erasing Time

100

tMBERASE

Multi-Block Erasing Time

6 – 12

130

(2)

tSR

Suspend Input to Ready

NWE

Number WriteErase Cycles

25 x 105

Cycles

Note 1

Refer to the notification (16) toward the end of this document

Note 2

tMBERASE depends on the number of blocks to be erased (min 6 ms a 15 ms x Erase block number)

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