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NM29N16 データシート(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 NM29N16
部品情報  16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM
PDF  30 Pages
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

NM29N16 データシート(HTML) 7 Page - National Semiconductor (TI)

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Operation Mode Logic and Command Tables (Continued)
TABLE III Command Table (HEX Data)
First Cycle
Second Cycle
Acceptable Command
During Busy
Sequential Data Input
80
Read Mode (1)
00
Read Mode (2)
50
Reset
FF
Yes
Auto Program
10
Auto Block Erase
60
D0
Suspend in Erasing
B0
Yes
Resume
D0
Status Read
70
Yes
ID Read
90
Bit Assignment of HEX Data
(Example)
TLD11915 – 84
Once the device is set into Read mode by ‘‘00H’’ or ‘‘50H’’ command additional Read commands are not needed for sequential
page read operations Table III shows the operation mode for Reads
TABLE IV Operation Mode for Reads
CLE ALE CE WE RE
IO1–IO8
Power
Read Mode
L
L
L
H
L
Data Output
Active
Output Deselect
L
L
L
H
H High Impedance Active
Standby
L
L
H
H
High Impedance Standby
Device Operation
READ MODE (1)
The Read mode (1) is set by issuing a ‘‘00H’’ command to the command register Refer to
Figure 2 below for timing details and
block diagram
TLD11915 – 29
TLD11915 – 30
A data transfer operation from the cell array to the register starts at the rising
edge of WE in the third cycle (after latching the address information) The
device will be in a busy state during this transfer period
After the transfer period the device returns to a ready state Serial data can
be output synchronously with the RE clock from the designated starting
pointer indicated during the address input cycle
FIGURE 2 Read Mode (1) Operation
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