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STM32C011D4U6 データシート(PDF) 44 Page - STMicroelectronics |
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STM32C011D4U6 データシート(HTML) 44 Page - STMicroelectronics |
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44 / 94 page  Electrical characteristics STM32C011x4/x6 44/94 DS13866 Rev 3 Table 29. Typical current consumption in Run depending on code executed Symbol Parameter Conditions Typ Unit Typ Unit General(1) Code Fetch from(2) 25 °C 25 °C IDD(Run) Supply current in Run mode fHCLK = fHSE_bypass = 48 MHz Reduced code(3) Flash memory 3.40 mA 70.8 μA/MHz Coremark 3.15 65.6 Dhrystone 3.20 66.7 Fibonacci 2.40 50.0 WhileLoop 1.80 37.5 Reduced code(3) SRAM 2.80 58.3 Coremark 2.70 56.3 Dhrystone 2.70 56.3 Fibonacci 2.85 59.4 WhileLoop 2.15 44.8 fHCLK = fHSE_bypass = 16 MHz Reduced code(3) Flash memory 1.25 78.1 Coremark 1.15 71.9 Dhrystone 1.15 71.9 Fibonacci 0.835 52.2 WhileLoop 0.645 40.3 Reduced code(3) SRAM 0.990 61.9 Coremark 0.950 59.4 Dhrystone 0.945 59.1 Fibonacci 1.00 62.5 WhileLoop 0.775 48.4 fHCLK = fHSE_bypass = 2 MHz Reduced code(3) Flash memory 0.225 μA 112.5 μA/MHz Coremark 0.210 105.0 Dhrystone 0.210 105.0 Fibonacci 0.175 87.5 WhileLoop 0.150 75.0 Reduced code(3) SRAM 0.195 97.5 Coremark 0.190 95.0 Dhrystone 0.190 95.0 Fibonacci 0.195 97.5 WhileLoop 0.165 82.5 |
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