STM32C011D4U6 datasheet(40/94 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32C011x4/x6

40/94

DS13866 Rev 3

5.3.4

Embedded voltage reference

The parameters given in Table 26 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 23: General operating

conditions.

VBOR1

Brownout reset threshold 1

VDD rising

2.05

2.10

2.18

VDD falling

1.95

2.00

2.08

VBOR2

Brownout reset threshold 2

VDD rising

2.20

2.31

2.38

VDD falling

2.10

2.21

2.28

VBOR3

Brownout reset threshold 3

VDD rising

2.50

2.62

2.68

VDD falling

2.40

2.52

2.58

VBOR4

Brownout reset threshold 4

VDD rising

2.80

2.91

3.00

VDD falling

2.70

2.81

2.90

Vhyst_POR_PDR

Hysteresis of VPOR and VPDR

Vhyst_BOR

Hysteresis of VBORx

100

IDD(BOR)(1)

BOR consumption

2.2

2.5

µA

1. Specified by design – Not tested in production.

Table 25. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 26. Embedded internal voltage reference

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

1.182 1.212

1.232

tS_vrefint (1)(2)

ADC sampling time when reading

the internal reference voltage

-4

µs

tstart_vrefint(2)

Start time of reference voltage

buffer when ADC is enable

µs

IDD(VREFINTBUF)(2)

VREFINT buffer consumption from

VDD when converted by ADC

13.5

µA

∆VREFINT(2)

Internal reference voltage spread

over the temperature range

VDD = 3 V

TCoeff

Averange temperature coefficient

ppm/°C

ACoeff

Long term stability

1000 hours, T = 25 °C

300

1000

ppm

VDDCoeff

Voltage coefficient

3.0 V < VDD < 3.6 V

250

1200

ppm/V

1. The shortest sampling time can be determined in the application by multiple iterations.

2. Specified by design – Not tested in production.

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