BUT18F datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Jun 11

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT18F; BUT18AF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Without heatsink compound.

2. With heatsink compound.

ISOLATION CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUT18F

−

850

BUT18AF

−

1000

VCEO

collector-emitter voltage

open base

BUT18F

−

400

BUT18AF

−

450

ICsat

collector saturation current

−

collector current (DC)

see Fig.4

−

ICM

collector current (peak value)

see Fig.4

−

base current (DC)

−

IBM

base current (peak value)

−

Ptot

total power dissipation

Th ≤ 25 °C; see Fig.2; note 1

−

Th ≤ 25 °C; see Fig.2; note 2

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VisolM

isolation voltage from all terminals to external heatsink (peak value)

−

1500

Cisol

isolation capacitance from collector to external heatsink

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage

IC = 100 mA; IBoff =0;

L = 25 mH; see Figs 3 and 6

BUT18F

400

−−

BUT18AF

450

−−

VCEsat

collector-emitter saturation voltage

IC = 4 A; IB = 800 mA; see Fig.7 −−

1.5

VBEsat

base-emitter saturation voltage

IC = 4 A; IB = 800 mA; see Fig.8 −−

1.3

ICES

collector-emitter cut-off current

VCE =VCESMmax; VBE =0;

note 1

−−

1mA

VCE =VCESMmax; VBE =0;

Tj = 125 °C; note 1

−−

2mA

IEBO

emitter-base cut-off current

VEB =9V; IC =0

−−

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