1999 Jun 11

4

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT18F; BUT18AF

Note

1. Measured with a half-sinewave voltage (curve tracer).

DC current gain

see Fig.9

10

18

35

10

20

35

Switching times resistive load (see Figs 10 and 11)

turn-on time

−−

1

µs

storage time

−−

4

µs

fall time

−−

0.8

µs

Switching times inductive load (see Figs 10 and 13)

storage time

−

1.6

2.5

µs

fall time

−

150

400

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Fig.2 Power derating curve.

handbook, halfpage

050

Th (

100

150

120

0

40

80

MGK674

Ptot max

(%)

Fig.3

Test circuit for collector-emitter

sustaining voltage.

handbook, halfpage

MGE252

+ 50 V

100 to 200

Ω

30 to 60 Hz

L

6 V

oscilloscope

vertical

horizontal

1

Ω

300

Ω