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AM29BDD160G データシート(PDF) 66 Page - Advanced Micro Devices

部品番号 AM29BDD160G
部品情報  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  79 Pages
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDD160G データシート(HTML) 66 Page - Advanced Micro Devices

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Am29BDD160G
June 7, 2006
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the section for more information.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min60
ns
tAVWL
tAS
Address Setup Time
Min0
ns
tWLAX
tAH
Address Hold Time
Min25
ns
tDVWH
tDS
Data Setup to WE# Rising Edge
Min15
ns
tWHDX
tDH
Data Hold from WE# Rising Edge
Min2
ns
tOES
Output Enable Setup Time
Min0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min0
ns
t
ELWL
t
CS
CE# Setup Time
Min0
ns
t
WHEH
t
CH
CE# Hold Time
Min0
ns
CE# Setup to CLK
Min7
t
WLWH
t
WP
WE# Width
Min25
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
9µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec.
t
VCS
V
CC Setup Time (Note 1)
Min50
µs
t
RB
Recovery Time from RY/BY#
Min0
ns
t
BUSY
RY/BY# Delay After WE# Rising Edge
Max
90ns
t
WPWS
WP# Setup to WE# Rising Edge with
Command
Min20
ns
t
WPRH
WP# Hold after RY/BY# Rising Edge
Max2
ns



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