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AM29PDL128G35PEFN データシート(PDF) 70 Page - Advanced Micro Devices

部品番号 AM29PDL128G35PEFN
部品情報  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
PDF  71 Pages
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDL128G35PEFN データシート(HTML) 70 Page - Advanced Micro Devices

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October 28, 2004
Am29PDL128G
69
P R E L IM IN A R Y
Table 9. Sector Protection Schemes
Added field: Unprotected-PPB not changeable, DYB is
changeable.
Figure 1. In-System Sector Protection/Sector
Unprotection Algorithms
Added Note
Table 14. Memory Array Command Definitions (x32
Mode)
Table 16. Memory Array Command Definitions (x16
Mode)
Added SecSi Sector Factory Protect and Sector Group
Protect Verify fields to tables.
Added Notes 8 and 9
Changed the Autoselect Sector Group Protect Verify
command variable from SA(3A) to SA02.
Table 15. Sector Protection Command Definitions
(x32 mode)
Table 17. Sector Protection Command Definitions
(x16 mode)
Changed variables in Cycle field for Password Pro-
gram (from 5 to 4), PPMLB Status (from 6 to 4), and
SPMLB Status (from 6 to 4).
Added Note 17
FBGA Ball Capacitance
Changed table from BGA Capacitance to Fortified
BGA Capacitance and modified values within table to
TBD.
DC Characteristics
Deleted the I
ACC specification row.
Special Package Handling Instructions
Changed the instructions to include molded packages
(BGA).
CFI
Modified wording of last paragraph to read ‘reading
array data”.
Revision B+3 (January 9, 2003)
Ordering Information
Revised Order Numbers and Package Markings to re-
flect speed option changes.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
…”may place the device to an unknown state. A reset
command is then required to return the device to
reading array data.”
Command Definition Table 14. and Table 15.
Changed one of the Data bus cycles in both tables
from 90 to A0.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Added notes, “
Note that the ACC function and unlock
bypass modes are not available when the SecSi sector
is enabled.”
Sector Erase Command Sequence and Chip Erase
Command Sequence
Added “
Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a [program/erase]
operation is in progress.”
Table 14. “Memory Array Command Definitions
(x32 Mode)” and Table 16. “Memory Array
Command Definitions (x16 Mode)”
Changed the first address of the unlock bypass reset
command sequence from BA to XXX.
Removed the Configuration Register Verify and Con-
figuration Register Write Commands.
Removed Note #15.
Absolute Maximum Ratings
Added ACC to Voltage with Respect to Ground section
and Note #2.
CMOS Compatible
Added I
LR parameter to table.
Deleted I
ACC parameter from table.
Changed the typicals of the VCC Active Intra-page... 1
and 5 MHz to 1 and 3.5.
Changed the min and max of the Voltage for ACC Pro-
gram Acceleration to 11.5 and 12.5.
Erase and Programming Performance
Changed the typical and max of the Sector Erase
Time to 0.4 and 5.



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