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L9907 データシート(PDF) 19 Page - STMicroelectronics |
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L9907 データシート(HTML) 19 Page - STMicroelectronics |
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19 / 49 page ![]() DS11800 Rev 5 19/49 L9907 Electrical specifications 48 3.3 ESD protection HBM according to MIL 883C, Method 3015.7 or EIA/JESD22-A114_A. HBM with all unzapped pins grounded. Gate current selection pin GCR -0.3 4.6 V -10 +10 mA Current sense amplifier pins IS1+,IS1-,IS2+,IS2- -7 75 V -10 10 mA Differential voltage between ISx +/- Abs |ISx+ - ISx-| - 15 V High-side drain sense VDH -4 75 V -10 10 mA FET-driver pins HS Bootstrap Cap pins: CBS_1 to 3 -0.3 90 V Differential gate to source HS pins: V(GHS_x) - V(SHS_x), x = 1 to 3(2) -0.3 20 V Source HS pins: SHS_1 to 3 -7 75 V Source LS pins: SLS_1 to 3 -7 10 V FET driver pins Differential gate to source LS pins: V(GLS_x) - V(SLS_x), x = 1 to 3(2) -0.3 20 V Current sense amplifier differential voltage BST_C-ISxx -0.3 90 V GND pins BGND and DGND -0.3 4.6 V AGND and EP -0.3 0.3 V 1. In standard battery level application (12 V systems) the I/O pins and Vcc pin can stand a short to battery up to 35 V. A short to 35 V battery on any output pin also forces the Vcc to approximately 35 V. Care must be taken in order to avoid that under such conditions the Vcc pin is strongly pulled down to 5 V (or 3.3 V) with a current exceeding the absolute maximum ratings level. 2. Negative AMR is -0.3 V or -20 mA. Table 9. Absolute maximum ratings (continued) Parameter Pin Min Max Unit Table 10. ESD protection Parameter Condition Min Max Unit Logic and power pins Human body model -2 2 kV FET driver pins Human body model -2 2 kV All pins but corner pins Charge device model -250 250 V Corner pins Charge device model -750 750 V |
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