| データシートサーチシステム |
|
L99DZ80EP データシート(PDF) 39 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L99DZ80EP データシート(HTML) 39 Page - STMicroelectronics |
|
39 / 68 page ![]() DocID18260 Rev 6 39/68 L99DZ80EP Application information 67 to be cleared through the SPI to reactivate the gate drivers. The drain source monitoring has a filter time of typ. 6 µs. This monitoring is only active while the corresponding gate driver is activated. If a drain-source monitor event is detected, the corresponding gate-driver remains activated for at maximum the filter time. When the gate driver switches on, the drain-source comparator requires the specified settling time until the drain-source monitoring is valid. During this time, this drain-source monitor event may start the filter time. The threshold voltage VSCd can be programmed using the SPI. Figure 15. H-bridge diagnosis 3.19 H-bridge monitoring in off-mode The drain source voltages of the H-Bridge driver external transistors can be monitored, while the transistors are switched off. If either bit OL_H1L2 or OL_H2L1 is set to ‘1’, while bit HEN = ‘1’, the H-drivers enter resistive low mode and the drain-source voltages can be monitored. Since the pull-up resistance is equal to the pull-down resistance on both sides of Table 26. H-bridge DS-monitor threshold DIAG<1> DIAG<0> Monitoring threshold voltage (typical) 00 VSCD1 =0.5 V 01 VSCD2 =1.0 V 10 VSCD3 =1.5 V 11 VSCD4 =2.0 V |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |