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L99DZ81EP データシート(PDF) 20 Page - STMicroelectronics |
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L99DZ81EP データシート(HTML) 20 Page - STMicroelectronics |
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20 / 62 page ![]() Electrical specifications L99DZ81EP 20/62 DocID023145 Rev 2 2.7 H-bridge driver Table 15. Gate drivers for the external Power-MOS (H-bridge) Symbol Parameter Test condition Min. Typ. Max. Unit Drivers for external high-side Power-MOS IGHx(Ch) Average charge current (charge stage) Tj =25°C 0.3 A RGHx On-resistance (discharge- stage) VSHx =0V; IGHx =50mA; Tj =25°C 46 8 VSHx =0V; IGHx =50mA; Tj =125 °C 810 VGHxH Gate-on voltage Outputs floating VSHx + 8 VSHx + 10 VSHx + 11.5 V RGSHx Passive gate-clamp resistance VGHx =0.5 V 15 k Drivers for external low-side Power-MOS IGLx(Ch) Average charge-current (charge stage) Tj =25°C 0.3 A RGLx On-resistance (discharge- stage) VSLx =0V; IGHx =50mA; Tj =25°C 46 8 VSLx =0V; IGHx =50mA; Tj =125 °C 810 VGHLx Gate-on voltage Outputs floating VSLx + 8 VSLx + 10 VSLx + 11.5 V RGSLx Passive gate-clamp resistance 15 k Table 16. Gate drivers for the external Power-MOS switching times Symbol Parameter Test condition Min. Typ. Max. Unit TG(HL)xHL Propagation delay time high to low (switch mode)(1) VS = 13.5 V; VSHx =0; RG =0 ; CG =2.7 nF 1.5 µs TG(HL)xLH Propagation delay time low to high (switch mode)(1) VS = 13.5 V; VSLx =0; RG =0 ; CG =2.7 nF 1.5 µs IGHxrmax Maximum charge current (current mode) VS = 13.5 V; VSHx =0; VGHx =1 V; SLEW < 4:0 1F H 24.5 31 38.5 mA IGHxfmax Maximum discharge current (current mode) VS = 13.5 V; VSHx =0; VGHx =2 V; SLEW < 4:0 1F H 18.5 25 33 mA dIIGHxr Charge current accuracy VS = 13.5 V; VSHx =0; VGHx =1V See Figure 6 dIIGHxf Discharge current accuracy VS = 13.5 V; VSHx =0; VGHx =2 V See Figure 7 |
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