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STM32H533CE データシート(PDF) 108 Page - STMicroelectronics |
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STM32H533CE データシート(HTML) 108 Page - STMicroelectronics |
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108 / 231 page ![]() Electrical characteristics STM32H533xx 108/231 DS14539 Rev 1 Table 28. Typical and maximum current consumption in Run mode, code with data processing running from flash memory, 1-way instruction cache ON, PREFETCH ON Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD(Run) Supply current in Run mode All peripherals disabled VOS0 250 27.6 30 51 64 - mA 200 22.1 24 43 55 - VOS1 200 19.1 21 36 46 64 180 17.7 19 34 43 58 150 14.6 16 29 38 54 VOS2 150 13.4 15 26 33 47 100 9.3 10 20 27 40 VOS3 100 8.5 9 17 23 35 25 2.8 4 9 14 25 1. Evaluated by characterization - Not tested in production. Table 29. Typical and maximum current consumption in Run mode, code with data processing running from SRAM with cache 1-way Parameter Conditions fHCLK (MHz) Typ LDO Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD (Run) Supply current in Run mode All peripherals disabled VOS0 250 26.8 29 50 63 - mA 215 23.6 25 45 57 - 200 21.4 23 42 54 - VOS1 200 18.6 20 35 45 60 180 17.1 19 33 52 58 150 14.1 15 28 37 53 VOS2 150 13.0 14 25 33 46 100 9.1 10 19 26 40 VOS3 100 8.3 9 17 23 34 60 5.4 6 13 18 29 25 2.83 9 1425 1. Evaluated by characterization - Not tested in production. |
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