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M58WR064EB データシート(PDF) 34 Page - STMicroelectronics

部品番号 M58WR064EB
部品情報  64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
PDF  82 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58WR064EB データシート(HTML) 34 Page - STMicroelectronics

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PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58WR064E the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2.2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
5. Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
Parameter
Condition
Min
Typ
Typical
after
100k W/E
Cycles
Max
Unit
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit) Erase
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
10
10
100
µs
Program Suspend Latency
5
10
µs
Erase Suspend Latency
5
20
µs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory
Program)(5)
t.b.a.(4)
s
4Mbit Program
Quadruple Word(5)
510
ms
Word/ Double Word/ Quadruple Word Program(3, 5)
8
100
µs
Parameter Block (4 KWord)
Program(3)
Quadruple Word(5)
8ms
Word
32
ms
Main Block (32 KWord) Program(3)
Quadruple Word(5)
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles



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