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M7020R データシート(PDF) 33 Page - STMicroelectronics |
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M7020R データシート(HTML) 33 Page - STMicroelectronics |
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33 / 150 page ![]() 33/150 M7020R Table 20. READ Address Format for Internal Registers Table 21. READ Address Format for Data and Mask Arrays WRITE COMMAND The WRITE can be a single write of a data array, mask array, register, or external SRAM location (CMD[2] = 0). It can be a burst WRITE (CMD[2] = 1) using an internal auto-incrementing address register (WBURADR) of the data array or mask array locations. A single-location WRITE is a three-cycle operation, shown in Figure 17, page 34. The burst WRITE adds one extra cycle for each successive WRITE. The WRITE operation sequence is as follows: – Cycle 1A: The host ASIC applies the WRITE In- struction on the CMD[1:0] (CMD[2] = 0), using CMDV=1 and the address supplied on the DQ Bus, as shown in Table 22, page 35. The host ASIC also supplies the index to the global mask register to mask the write to the data array or mask array location in CMD[5:3]. For SRAM WRITEs, the host ASIC must supply the SADR[21:20] on CMD[8:6]. The host ASIC sets CMD[9] to '0' for the normal WRITE. – Cycle 1B: The host ASIC continues to apply the WRITE Instruction to the CMD[1:0] (CMD[2] = 0), using CMDV = 1 and the address supplied on the DQ Bus. The host ASIC contin- ues to supply the global mask register index to mask the WRITE to the data or mask array loca- tions in CMD[5:3]. The host ASIC selects the device where ID[4:0] matches the DQ[25:21] lines, or it selects all the devices when DQ[25:21] = 11111. – Cycle 2: The host ASIC drives the DQ[67:0] with the data to be written to the data array, mask array, external SRAM, or register location of the selected device. – Cycle 3: Idle cycle. At the termination of this cy- cle, another operation can begin. Note: The latency of the SRAM WRITE will be different than the one described above (see SRAM PIO Access, page 126). The burst WRITE operation lasts for n + 2 CLK cy- cles (where n signifies the number of accesses in the burst as specified in the BLEN field of the WBURREG register, please see Figure 18, page 35). This operation assumes that the host ASIC has programmed the WBURREG with the starting ad- dress (ADR) and the length of transfer (BLEN) be- fore initiating the burst write command (see Table 24, page 36 for format). The sequence is as fol- lows: – Cycle 1A: The host ASIC applies the WRITE In- struction on the CMD[1:0] (CMD[2] = 1), using CMDV = 1 and the address supplied on the DQ Bus, as shown in Table 24, page 36. The host ASIC also supplies the index to the global mask register to mask the write to the data or mask ar- ray locations in CMD[5:3]. – Cycle 1B: The host ASIC continues to apply the WRITE Instruction on the CMD[1:0] (CMD[2] = 0), using CMDV = 1 and the address supplied on the DQ Bus. The host ASIC contin- ues to supply the global mask register index to mask the WRITE to the data or mask array loca- tions in CMD[5:3]. The host ASIC selects the device where ID[4:0] matches the DQ[25:21] lines, or it selects all the devices when DQ[25:21] = 11111. DQ[67:26] DQ[25:21] DQ[20:19] DQ[18:6] DQ[5:0] Reserved ID 11: Register Reserved Register Address DQ[67:26] DQ[25:21] DQ[20:19] DQ[18:15] DQ[14:0] Reserved ID 00: Data Array Reserved Do not care. These 15 bits come from the internal register (RBURADR) which increments for each access. Reserved ID 01: Mask Array Reserved Do not care. These 16 bits come from the internal register (RBURADR) which increments for each access. |
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