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TSV522IST データシート(PDF) 8 Page - STMicroelectronics |
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TSV522IST データシート(HTML) 8 Page - STMicroelectronics |
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8 / 27 page ![]() Electrical characteristics TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A 8/27 Doc ID 022743 Rev 1 SVR Supply voltage rejection ratio 20 log ( ΔVCC/ΔVio) VCC = 2.7 V to 5.5 V, Vout =VCC/2 T = 25 °C 65 87 dB -40 °C < T < 125 °C 60 Avd Large signal voltage gain Vout = 0.5 V to (VCC - 0.5 V), RL =1 MΩ T = 25 °C 94 109 dB -40 °C < T < 125 °C 68 VOH High level output voltage T = 25 °C -40 °C < T < 125 °C 535 50 mV VOL Low level output voltage T = 25 °C -40 °C < T < 125 °C 935 50 mV Iout Isink Vout = VCC, T = 25 °C 36 55 mA Vout = VCC, -40 °C < T < 125 °C 27 Isource Vout = 0 V, T = 25 °C 36 55 mA Vout = 0 V, -40 °C < T < 125 °C 27 ICC Supply current (per channel) Vout =VCC/2, RL >1 MΩ T = 25 °C 45 60 µA -40 °C < T < 125 °C 45 60 AC performance GBP Gain bandwidth product RL =10kΩ, CL = 100 pF 0.73 1.15 MHz Fu Unity gain frequency RL =10kΩ, CL = 100 pF 900 kHz Φm Phase margin RL =10kΩ, CL = 100 pF 55 degrees Gm Gain margin RL =10kΩ, CL = 100 pF 7 dB SR Slew rate RL =10kΩ, CL = 100 pF, Vout = 0.5 V to VCC -0.5V 0.89 V/ μs ∫ e n Low-frequency peak-to- peak input noise Bandwidth: f = 0.1 to 10 Hz 14 µV pp en Equivalent input noise voltage f = 1 kHz f = 10 kHz 57 39 THD+N Total harmonic distortion + noise Follower configuration, fin = 1 kHz, RL = 100 kΩ, Vicm = VCC/2, BW = 22 kHz, Vout = 1 Vpp 0.002 % 1. See Section 4.6: Input offset voltage drift over temperature on page 15. 2. Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. 3. Guaranteed by design. Table 6. Electrical characteristics at VCC+ = +5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and RL =10kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit nV Hz ------------ |
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