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TSV522IST データシート(PDF) 16 Page - STMicroelectronics

部品番号 TSV522IST
部品情報  High merit factor (1.15 MHz for 45 μA) CMOS op amps
PDF  27 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSV522IST データシート(HTML) 16 Page - STMicroelectronics

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Application information
TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A
16/27
Doc ID 022743 Rev 1
4.7
Long term input offset voltage drift
In a product reliability evaluation, two types of stress acceleration are usable:
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum
junction temperature allowed by the technology) with the ambient temperature
The voltage acceleration has been defined based on JEDEC results, and is defined by:
Equation 2
where:
AFV is the voltage acceleration factor
ß
is the voltage acceleration constant in 1/V, constant technology parameter
VS is the stress voltage used for the accelerated test
VU is the use voltage for the application
The temperature acceleration is driven by the Arrhenius model, and is defined by:
Equation 3
where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on failure rate
k
is the Boltzmann’s constant
TU is the temperature of the die when VU is used
TS is the temperature of the die under temperature stress
The final acceleration factor, AF, is the multiplication of these two acceleration factors, which
is:
Equation 4
AF = AFT x AFV
Based on this AF, calculated following the defined usage temperature and usage voltage of
the product, the 1000 h duration of the stress corresponds to a number of equivalent months
of usage.
Equation 5
Months = AF x 1000 h x 12 months / (24h x 365.25 days)
A
FV
e
β
VS VU
()
=
A
FT
e
E
a
k
------
1
TU
------
1
TS
------
⎝⎠
⎛⎞
=



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