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STM8L151F3P6 データシート(PDF) 56 Page - STMicroelectronics

部品番号 STM8L151F3P6
部品情報  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  112 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L151F3P6 データシート(HTML) 56 Page - STMicroelectronics

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Electrical parameters
STM8L151x2, STM8L151x3
56/112
Doc ID 018780 Rev 4
Figure 12.
Typ. IDD(RUN) vs. VDD,fCPU = 16 MHz
1.
Typical current consumption measured with code executed from RAM
4.
The run from RAM consumption can be approximated with the linear formula:
IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA
5.
Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption
(IDD HSE) must be added. Refer to Table 27.
6.
Tested in production.
7.
The run from Flash consumption can be approximated with the linear formula:
IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA
8.
Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption
(IDD LSE) must be added. Refer to Table 28.
1.50
1.75
2.00
2.25
2.50
2.75
3.00
1.6
2.1
2.6
3.1
3.6
VDD [V]
-40°C
25°C
90°C
130°C
ai18213



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