LM20154MH datasheet(3/31 Pages) TI1

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LM20154

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SNVS531G – OCTOBER 2007 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

Voltages from the indicated pins to GND

AVIN, PVIN, EN, PGOOD, SS/TRK, COMP, FB, SYNCOUT

-0.3V to +6V

Storage Temperature

-65°C to 150°C

Junction Temperature

150°C

Power Dissipation(2)

2.6W

Lead Temperature (Soldering, 10 sec)

260°C

Minimum ESD Rating(3)

±2kV

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test

conditions, see the Electrical Characteristics.

(2)

The maximum allowable power dissipation is a function of the maximum junction temperature, TJ_MAX, the junctions-to-ambient thermal

resistance,

θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated

using: PD_MAX = (TJ_MAX – TA)/θJA. The maximum power dissipations of 2.6W is determined using TA = 25°C, θJA = 38°C/W, and TJ_MAX

= 125°C.

(3)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor to each pin.

OPERATING RATINGS

PVIN, AVIN to GND

2.95V to 5.5V

Junction Temperature

−40°C to + 125°C

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