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MS67C10 データシート(PDF) 5 Page - Bruckewell Technology LTD

部品番号 MS67C10
部品情報  Green Device Available
PDF  7 Pages
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メーカー  BWTECH [Bruckewell Technology LTD]
ホームページ  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MS67C10 データシート(HTML) 5 Page - Bruckewell Technology LTD

  MS67C10 Datasheet HTML 1Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 2Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 3Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 4Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 5Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 6Page - Bruckewell Technology LTD MS67C10 Datasheet HTML 7Page - Bruckewell Technology LTD  
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MS67C10
N & P Channel 60-V Dual MOSFETs
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
P-CH Electrical Characteristics (TJ=25 °C, unless otherwise)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
-60
V
△BV
DSS
/
△TJ
BVDSS Temperature Coefficient
Reference to 25°C , ID = 1mA
-0.05
V/°C
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
±100
nA
IDSS
Drain-Source Leakage Current
VDS = -60 V , VGS = 0 V , TJ=25°C
VDS = -48 V , VGS = 0 V , TJ=125°C
-1
10
uA
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
RDS(on)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -6 A
VGS = -4.5 V, ID = -3 A
87
120
105
145
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS , ID = 250uA
-1.0
-1.6
-2.5
V
△V
GS(th)
Temperature Coefficient
3
mV/°C
gfs
Forward Transconductance
VDS = -10 V, ID = -6 A
5.5
S
Dynamic and switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
Qg
Total Gate Charge
2,3
VDS = -30 V , ID = -4 A,
VGS = -10 V
--
10
15
nC
Qgs
Gate-Source Charge
2,3
--
1.6
3.2
nC
Qgd
Gate-Drain Charge
2,3
--
3
6
nC
td(on)
Turn-On Delay Time
2,3
ID = 1 A , RG = 6 Ω,
VGS = -30 V , VDD = -30 V
--
8
16
ns
tr
Rise Time
2,3
--
15.4
30
ns
td(off)
Turn-Off Delay Time
2,3
--
42.5
80
ns
tf
Fall Time
2,3
--
8.4
16
ns
CISS
Input Capacitance
VDS = -30 V
f = 1 MHz , VGS = 0 V
--
785
1300
pF
COSS
Output Capacitance
--
175
300
pF
CRSS
Reverse Transfer Capacitance
--
112
220
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source Current
VG = VD = 0 V , Force Current
--
--
-3.5
A
ISM
Pulsed Source Current
--
--
-7
A
VSD
Diode Forward Voltage
VGS = 0 V , IS = -1 A , TJ = 25°C
--
--
-1
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.



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