MS67C10 datasheet(3/7 Pages) BWTECH

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MS67C10

N & P Channel 60-V Dual MOSFETs

Publication Order Number: [MS67C10]

Dynamic and switching Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

2,3

VDS = 30 V , ID = 4 A,

VGS = 10 V

Qgs

Gate-Source Charge

2,3

2.9

Qgd

Gate-Drain Charge

2,3

2.3

td(on)

Turn-On Delay Time

2,3

ID = 1 A , RG = 3.3 Ω,

VGS = 10 V , VDD = 30 V

3.9

Rise Time

2,3

12.6

td(off)

Turn-Off Delay Time

2,3

23.1

Fall Time

2,3

6.7

CISS

Input Capacitance

VDS = 15 V

f = 1 MHz , VGS = 0 V

800

1160

COSS

Output Capacitance

380

550

CRSS

Reverse Transfer Capacitance

115

170

Total Gate Charge

VDS = 0 V , f = 1 MHz , VGS = 0 V

1.7

3.4

Drain-Source Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source Current

VG = VD = 0 V , Force Current

4.5

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

VGS = 0 V , IS = 1 A , TJ = 25°C

Note :

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

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