MS67C10 datasheet(2/7 Pages) BWTECH

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MS67C10

N & P Channel 60-V Dual MOSFETs

Publication Order Number: [MS67C10]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Rating

Unit

VDS

Drain-Source Voltage

-60

VGS

Gate-Source Voltage

±20

Drain Current - Continuous (TC =25°C)

4.5

-3.5

Drain Current - Continuous (TC =70°C)

2.85

-2.21

IDM

Drain Current - Pulsed

-14

Power Dissipation (TC =25°C)

3.57

Power Dissipation - Derate above 25°C

0.028

W/°C

Storage Temperature Range

-55 to 150

°C

TSTG

Operating Junction Temperature Range

-55 to 150

°C

Thermal Resistance Ratings

Symbol

Parameter

Typ.

Max.

Units

RθJA

Thermal Resistance Junction to ambient

°C/W

RθJC

Thermal Resistance Junction to Case

N-CH Electrical Characteristics (TJ=25 °C, unless otherwise)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = VGS, ID = 250uA

△BV

DSS

△TJ

BVDSS Temperature Coefficient

Reference to 25°C , ID = 1mA

0.05

V/°C

IGSS

Gate-Source Leakage Current

VDS = 0 V , VGS = ±20 V

±100

IDSS

Drain-Source Leakage Current

VDS = 60 V , VGS = 0 V , TJ=25°C

VDS = 48 V , VGS = 0 V , TJ=125°C

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 6 A

VGS = 4.5 V, ID = 3 A

VGS(th)

Gate Threshold Voltage

VGS = VDS , ID = 250uA

1.2

1.8

2.5

△V

GS(th)

Temperature Coefficient

-4.2

mV/°C

gfs

Forward Transconductance

VDS = 10 V, ID = 4 A

4.2

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