STM32F413RHT6 datasheet(99/207 Pages) STMICROELECTRONICS

部品番号	STM32F413RHT6

部品情報	ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs

PDF	207 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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99 / 207 page

DocID029162 Rev 2

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STM32F413xG/H

Electrical characteristics

174

Table 35. Typical and maximum current consumption in Standby mode - VDD= 3.6 V

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA =

25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

TA =

125 °C

IDD_STBY

Supply current in

Standby mode

Low-speed oscillator (LSE in low drive

mode) and RTC ON

3.7

5.2

20.6

40.5

82.7

µA

Low-speed oscillator (LSE in high drive

mode) and RTC ON

4.5

6.0

21.4

41.3

83.5

RTC and LSE OFF

2.5

4.0

19.4

39.3

81.5(3)

1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.

2. Guaranteed by characterization, not tested in production unless otherwise specified.

3. Tested in production.

Table 36. Typical and maximum current consumptions in VBAT mode

Symbol Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

85 °C

TA =

105 °C

TA =

125 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT =

3.6 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain

supply

current

Low-speed oscillator (LSE in

low-drive mode) and RTC ON

0.74

0.84

1.04

1.24

3.00

5.00

10.00

µA

Low-speed oscillator (LSE in

high-drive mode) and RTC ON

1.51

1.64

1.89

2.00

3.80

5.80

11.60

RTC and LSE OFF

0.03

0.04

2.00

4.00

8.00

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization.

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