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STFI15N95K5 データシート(PDF) 1 Page - STMicroelectronics |
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STFI15N95K5 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() July 2016 DocID029528 Rev 1 1/13 This is information on a product in full production. www.st.com STFI15N95K5 N- channel 950 V, 0.41 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a I²PAKFP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID Ptot STFI15N95K5 950 V 0.50 Ω 12 A 30 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOS FET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STFI15N95K5 15N95K5 I²PAKFP (TO-281) Tube 1 2 3 I 2 PAKFP (TO-281) AM15572v1_no_tab D(2) G(1) S(3) |
同様の部品番号 - STFI15N95K5 |
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同様の説明 - STFI15N95K5 |
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