STFI15N95K5 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STFI15N95K5

部品情報	N-channel 950 V, 0.41 Ω typ., 12 A MDmesh™K5 Power MOSFET in a I²PAKFP package

PDF	13 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

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5 / 13 page

STFI15N95K5

Electrical characteristics

DocID029528 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

Source-drain current

(pulsed)

VSD(1)

Forward on voltage

ISD = 12 A, VGS = 0 V

1.5

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

444

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 17: "Test circuit for

inductive load switching and

diode recovery times")

630

Qrr

Reverse recovery charge

9.2

µC

IRRM

Reverse recovery current

Notes:

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

V (BR)GSO

Gate-source breakdown voltage

IGS= ± 1 mA, ID= 0 A

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.

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