STFI15N95K5 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STFI15N95K5

4/13

DocID029528 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

950

IDSS

Zero gate voltage drain current

VDS = 950 V, VGS = 0 V

µA

VDS = 950 V, VGS = 0 V

TC = 125 °C(1)

µA

IGSS

Gate body leakage current

VGS = ± 20 V, VDS = 0 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 6 A

0.41

0.50

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

855

Coss

Output capacitance

Crss

Reverse transfer capacitance

Co(tr)(1)

Equivalent capacitance time

VGS = 0 V, VDS = 0 to 760 V

104

Co(er)(2)

Equivalent capacitance

energy related

Intrinsic gate resistance

f = 1 MHz open drain

Ω

Total gate charge

VDD = 760 V, ID = 12 A

VGS= 10 V

(see Figure 16: "Test circuit

for gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 475 V, ID = 6 A, RG

= 4.7 Ω

VGS = 10 V

(see Figure 15: "Test circuit for

resistive load switching times"

and Figure 18: "Unclamped

inductive load test circuit")

Rise time

td(off)

Turn-off delay time

Fall time

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