STFI15N95K5

Electrical ratings

DocID029528 Rev 1

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 30

V

ID(1)

12

A

ID(1)

7.6

A

IDM(2)

Drain current pulsed

48

A

30

W

ESD

Gate-

source human body model (R= 1,5 kΩ, C = 100 pF)

2

kV

Insulation withstand voltage (RMS) from all three leads to external

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Operating junction temperature range

- 55 to 150

°C

Storage temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

4.2

°C/W

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive (pulse width

4

A

124

mJ