STM32F398VE datasheet(85/151 Pages) STMICROELECTRONICS

85 / 151 page

DocID027227 Rev 2

85/151

STM32F398VE

Electrical characteristics

142

6.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

6.3.10

FSMC characteristics

Unless otherwise specified, the parameters given in Table 41 to Table 56 for the FSMC

interface are derived from tests performed under the ambient temperature, fHCLK frequency

and VDD supply voltage conditions summarized in Table 18 with the following configuration:



Output speed is set to OSPEEDRy[1:0] = 11



Capacitive load C = 30 pF



Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.14: I/O port characteristics: for more details on the input/output

characteristics.

Table 39. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA–40 to +105 °C

53.5

µs

tERASE Page (2 KB) erase time

TA –40 to +105 °C

tME

Mass erase time

TA –40 to +105 °C

IDD

Supply current

Write mode

Erase mode

Table 40. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Data based on characterization results, not tested in production.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycle(2) at TA = 55 °C

STM32F398VE データシート(PDF) 85 Page - STMicroelectronics

STM32F398VE データシート(HTML) 85 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

データシートダウンロード