STM32L100RB datasheet(64/103 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L100C6 STM32L100R8/RB

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DocID024295 Rev 5

6.3.7

Internal clock source characteristics

The parameters given in the following table are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 12.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Table 29. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

TRIM

(1)(2)

1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are

multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

HSI user-trimmed

resolution

Trimming code is not a multiple of 16

± 0.4

0.7

Trimming code is a multiple of 16

± 1.5

ACCHSI(2)

2. Guaranteed by characterization results.

VDDA = 1.8 V to 3.6 V

TA = -40 to 85 °C

-10

+10

tSU(HSI)(2)

HSI oscillator

startup time

3.7

µs

IDD(HSI)(2)

HSI oscillator

power consumption

100

140

µA

Table 30. LSI oscillator characteristics

Symbol

Parameter

Min

Typ

Max

Unit

fLSI(1)

1. Guaranteed by test in production.

LSI frequency

kHz

DLSI(2)

2. This is a deviation for an individual part, once the initial frequency has been measured.

LSI oscillator frequency drift

0°C

≤TA ≤ 85°C

-10

tsu(LSI)(3)

3. Guaranteed by design.

LSI oscillator startup time

200

µs

IDD(LSI)(3) LSI oscillator power consumption

400

510

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