P5021 datasheet(68/155 Pages) NXP

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P5021 QorIQ Integrated Processor Data Sheet, Rev. 1

Electrical characteristics

Freescale Semiconductor

This table provides the DDR controller interface capacitance for DDR3 and DDR3L.

This table provides the current draw characteristics for MVREF.

I/O leakage current

IOZ

–50

μA6

Output high current (VOUT = 0.641 V)

IOH

—–23.3

7, 8

Output low current (VOUT = 0.641 V)

IOL

23.3

—

7, 8

Notes:

1. GVDD is expected to be within 50 mV of the DRAM’s voltage supply at all times. The DRAM’s and memory controller’s voltage

supply may or may not be from the same source.

2. MVREF is expected to be equal to 0.5 × GVDD and to track GVDD DC variations as measured at the receiver. Peak-to-peak

noise on MVREF may not exceed the MVREF DC level by more than ±1% of the DC value (that is, ±13.5 mV).

3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made, and it is expected to be

equal to MVREF with a min value of MVREF – 0.04 and a max value of MVREF + 0.04. VTT should track variations in the DC

level of MVREF.

4. The voltage regulator for MVREF must meet the specifications stated in Table 21.

5. Input capacitance load for DQ, DQS, and DQS are available in the IBIS models.

6. Output leakage is measured with all outputs disabled, 0 V

≤ V

OUT ≤ GVDD.

7. Refer to the IBIS model for the complete output IV curve characteristics.

8. IOH and IOL are measured at GVDD = 1.283 V

Table 20. DDR3 and DDR3L SDRAM Capacitance

For recommended operating conditions, see Table 3.

Parameter

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS, DQS

CIO

1, 2

Delta input/output capacitance: DQ, DQS, DQS

CDIO

—

0.5

1, 2

Notes:

1. This parameter is sampled. GVDD = 1.5 V ± 0.075 V (for DDR3), f = 1 MHz, TA =25°C, VOUT = GVDD/2,

VOUT (peak-to-peak) = 0.150 V.

2. This parameter is sampled. GVDD = 1.35 V – 0.067 V ÷ + 0.100 V (for DDR3L), f = 1 MHz, TA =25°C, VOUT = GVDD/2,

VOUT (peak-to-peak) = 0.167 V.

Table 21. Current Draw Characteristics for MVREF

For recommended operating conditions, see Table 3.

Parameter

Symbol

Min

Max

Unit

Notes

Current draw for DDR3 SDRAM for MVREF

MVREF

—

1250

μA—

Current draw for DDR3L SDRAM for MVREF

MVREF

—

1250

μA—

Table 19. DDR3L SDRAM interface DC electrical characteristics (GVDD = 1.35 V)

1 (continued)

For recommended operating conditions, see Table 3.

Parameter

Symbol

Min

Max

Unit

Note

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