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MMPF0200Z データシート(PDF) 65 Page - NXP Semiconductors

部品番号 MMPF0200Z
部品情報  12 Channel Configurable Power Management Integrated Circuit
PDF  118 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0200Z データシート(HTML) 65 Page - NXP Semiconductors

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Analog Integrated Circuit Device Data
Freescale Semiconductor
65
PF0200Z
Functional Block Requirements and Behaviors
Power Generation
Start-up Overshoot
ISWBST = 0.0 mA
VSWBSTOSH
–
–
500
mV
Transient Load Response
ISWBST from 1.0 to 100 mA in 1.0 µs
Maximum transient Amplitude
VSWBSTTR
–
–
300
mV
Transient Load Response
ISWBST from 100 to 1.0 mA in 1.0 µs
Maximum transient Amplitude
VSWBSTTR
–
–
300
mV
SWITCH MODE SUPPLY SWBST (CONTINUED)
Transient Load Response
ISWBST from 1.0 to 100 mA in 1.0 µs
Time to settle 80% of transient
tSWBSTTR
–
–
500
µs
Transient Load Response
ISWBST from 100 to 1.0 mA in 1.0 µs
Time to settle 80% of transient
tSWBSTTR
––
20
ms
NMOS Off Leakage
SWBSTIN = 4.5 V, SWBSTMODE [1:0] = 00
ISWBSTHSQ
–1.0
5.0
µA
Turn-on Time
Enable to 90% of VSWBST, ISWBST = 0.0 mA
tONSWBST
––
2.0
ms
Switching Frequency
fSWBST
–2.0
–
MHz
Efficiency
ISWBST = ISWBSTMAX
SWBST
–86–
%
Notes
49.
Only in Auto mode.
Table 74. SWBST Electrical Specifications (continued)
All parameters are specified at TA = -40 to 85 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external
component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V,
VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.
Parameters
Symbol
Min
Typ
Max
Units



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