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STM8L151C2 データシート(PDF) 80 Page - STMicroelectronics

部品番号 STM8L151C2
部品情報  8-bit ultra-low-power MCU, up to 8 KB Flash, up to 256 bytes data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  123 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L151C2 データシート(HTML) 80 Page - STMicroelectronics

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Electrical parameters
STM8L151x2, STM8L151x3
80/123
DS7204 Rev 11
Table 37. I/O static characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
VIL
Input low level voltage(2)
Input voltage on true open-drain
pins (PC0 and PC1)
VSS-0.3
-
0.3 x VDD
V
Input voltage on any other pin
VSS-0.3
-
0.3 x VDD
VIH
Input high level voltage (2)
Input voltage on true open-drain
pins (PC0 and PC1)
with VDD < 2 V
0.70 x VDD
-5.2
V
Input voltage on true open-drain
pins (PC0 and PC1)
with VDD ≥ 2 V
-5.5
Input voltage on any other pin
0.70 x VDD
-
VDD+0.3
Vhys
Schmitt trigger voltage
hysteresis (3)
I/Os
-
200
-
mV
True open drain I/Os
-
200
-
Ilkg
Input leakage current (4)
VSS≤VIN≤VDD
High sink I/Os
-
-
50 (5)
nA
VSS≤VIN≤VDD
True open drain I/Os
-
-
200(5)
VSS≤VIN≤VDD
PA0 with high sink LED driver
capability
-
-
200(5)
RPU
Weak pull-up equivalent
resistor(2)(6)
VIN=VSS
30
45
60
k
Ω
CIO
I/O pin capacitance
-
-
5
-
pF
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2.
Guaranteed by characterization results.
3.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4.
The max. value may be exceeded if negative current is injected on adjacent pins.
5.
Not tested in production.
6.
RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in
Figure 23).



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